Chemical Vapor Deposition for Microelectronics: Principles, by Arthur Sherman

By Arthur Sherman

Offers an intensive, entire research of chemical vapor deposition (CVD). figuring out CVD calls for wisdom of fluid mechanics, plasma physics, chemical thermodynamics, and kinetics in addition to homogenous and heterogeneous chemical reactions. this article offers those points of CVD in an built-in model, and in addition experiences motion pictures to be used in built-in circuit expertise.

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Wiley & Sons (1977). 17. , Electrochemical Systems, New Jersey: Prentice-Hall (1983). 18. J. Crys. Growth 57:259 (1982). 19. , Interactions in metallization systems for integrated circuits, J. Vac. Sci. TechnoI. B2 :693 (1984). 20. F. (editor), Deposition Technologies for Films and Coatings, Park Ridge, NJ, Noyes Publications (1982). 21. , Characterization of lPCVO aluminum for VlSI processing. JECS 131 :2175 (1984). 22. , low pressure CVD production processes for poly, nitride, and oxide. Solid State Techn.

In: Proc. F. Donaghey, P. N. ), p. 47, Electrochemical Society, Princeton, NJ (1977). These figures were originally presented at the Fall 1977 Meeting of the Electrochemical Society, Inc. held in Atlanta, Georgia. 10. , Analysis of the chemical vapor deposition of titanium diboride. JECS 124 :786 (1977). 11. , A thorough thermodynamic evaluation of the silicon-hydrogen-chlorine system. JECS 119:1741 (1972). 12. , A mathematical model of the coupled fluid mechanics and chemical kinetics in a chemical vapor deposition reactor.

18. J. Crys. Growth 57:259 (1982). 19. , Interactions in metallization systems for integrated circuits, J. Vac. Sci. TechnoI. B2 :693 (1984). 20. F. (editor), Deposition Technologies for Films and Coatings, Park Ridge, NJ, Noyes Publications (1982). 21. , Characterization of lPCVO aluminum for VlSI processing. JECS 131 :2175 (1984). 22. , low pressure CVD production processes for poly, nitride, and oxide. Solid State Techn. 20(4) :63 (1977). 1 INTRODUCTION As discussed in the previous chapter, CVD of thin films depends on a heterogeneous su rface reaction between a reacti ng gas and a hot surface.

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